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Complex crater form...
Complex crater formation on silicon surfaces by low-energy Ar cluster ion implantation
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- Popok, Vladimir, 1966 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Prasalovich, Sergei, 1976 (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg
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- Campbell, Eleanor E B, 1960 (author)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg
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(creator_code:org_t)
- Elsevier BV, 2004
- 2004
- English.
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In: Surface Science. - : Elsevier BV. - 0039-6028. ; 566-568, s. 1179-1184
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Abstract
Subject headings
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- Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Cluster ion implantation
- surface morphology
- atomic force microscopy
- surface morphology
Publication and Content Type
- ref (subject category)
- art (subject category)
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