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- Popok, Vladimir,1966Chalmers tekniska högskola,Chalmers University of Technology (author)
Complex crater formation on silicon surfaces by low-energy Ar cluster ion implantation
- Article/chapterEnglish2004
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- Elsevier BV,2004
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- LIBRIS-ID:oai:gup.ub.gu.se/61240
- https://gup.ub.gu.se/publication/61240URI
- https://doi.org/10.1016/j.susc.2004.06.082DOI
- https://research.chalmers.se/publication/61240URI
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- Language:English
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- Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.
Subject headings and genre
- NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
- NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
- Cluster ion implantation
- surface morphology
- atomic force microscopy
- surface morphology
Added entries (persons, corporate bodies, meetings, titles ...)
- Prasalovich, Sergei,1976Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg (author)
- Campbell, Eleanor E B,1960Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg(Swepub:gu)xcamel (author)
- Chalmers tekniska högskolaInstitutionen för fysik (GU) (creator_code:org_t)
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- In:Surface Science: Elsevier BV566-568, s. 1179-11840039-6028
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