A carbon nanotube gated carbon nanotube transistor with 5 ps gate

Svensson, Johannes, 1978 (author): Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg

Tarakanov, Yury, 1981 (author): Chalmers tekniska högskola,Chalmers University of Technology

Kinaret, Jari, 1962 (author): Chalmers tekniska högskola,Chalmers University of Technology

Campbell, Eleanor E B, 1960 (author): Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg

(creator_code:org_t)

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Abstract Subject headings

Semiconducting carbon nanotubes (CNTs) are attractive as channel material for field-effect transistors due to their high carrier mobility. In this paper we show that a local CNT gate can provide a significant improvement in the subthreshold slope of a CNT transistor compared to back gate switching and provide gate delays as low as 5 ps. The CNT gated CNT transistor devices are fabricated using a two-step chemical vapour deposition technique. The measured transfer characteristics are in very good agreement with theoretical modelling results that provide confirmation of the operating principle of the transistors. Gate delays below 2 ps should be readily achievable by reducing the thickness of the gate dielectric.

By the author/editor: Svensson, Johann ...; Tarakanov, Yury, ...; Lee, DongSu; Kinaret, Jari, 1 ...; Park, YungWoo; Campbell, Eleano ...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

By the university: University of Gothenburg; Chalmers University of Technology

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