Two Ultra-Low Power MM-Wave Push-Pull VCOs in FD-SOI CMOS

• Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a -119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a -111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of -186.2 dB. Their active areas are 0.03 mm 2 and 0.096 mm 2 respectively.

• Two low-power mm-wave voltage controlled oscillators (VCOs) designed in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process are demonstrated, using a push-pull differential architecture. Measurement show that the first VCO has a 10.8% tuning rage centered at 30.3 GHz, and the second has a 8.9 % tuning range at 58.7 GHz. The 30 GHz VCO consumes 1.06 mW from a 1 V supply, and has a −119 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of −188.4 dB. The 60 GHz VCO consumes 1.35 mW and has a −111.9 dBc/Hz phase noise at 10 MHz offset, achieving a figure of merit of −186.2 dB. Their active areas are 0.03 mm2 and 0.096 mm2 respectively.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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kon (subject category)

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