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Incorporation of Ma...
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Papamichail, Alexis, 1990- (author)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
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- Stanishev, Vallery, 1970- (author)
- Linköpings universitet,Linköping University,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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- Darakchieva, Vanya (author)
- Linköpings universitet,Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden,Centre for III-nitride technology (C3NiT); Terahertz Materials Analysis Center - THeMAC
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(creator_code:org_t)
- 2022-06-15
- 2022
- English.
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In: Physica Status Solidi (B) Basic Research. - : Wiley. - 0370-1972 .- 1521-3951. ; 259:10
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Abstract
Subject headings
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- Herein, metal–organic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] ≈2 × 1019 cm−3 is performed. In a sequence of MOCVD runs, operational conditions, including temperature and flow rate of precursors, are maintained except for intentionally larger flows of hydrogen carrier gas fed into the reactor. By employing the largest hydrogen flow of 25 slm in this study, the performance of the as-grown Mg-doped GaN layers is certified by a room-temperature hole concentration of p ≈2 × 1017 cm−3 in the absence of any thermal activation treatment. Experimental evidence is delivered that the large amounts of hydrogen during the MOCVD growth can regulate the incorporation of the Mg atoms into GaN in a significant way so that MgH complex can coexist with a dominant and evidently electrically active isolated MgGa acceptor.
Subject headings
- NATURVETENSKAP -- Kemi -- Annan kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Other Chemistry Topics (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- gallium nitride
- hydrogen
- metal–organic chemical vapor deposition
- p-type doping
- gallium nitride; hydrogen; metal-organic chemical vapor deposition; p-type doping
Publication and Content Type
- art (subject category)
- ref (subject category)
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