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Precursor evaluation for in situ InP nanowire doping
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- Borgström, Magnus (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
- Norberg, E. (author)
- Wickert, P. (author)
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- Nilsson, H. A. (author)
- Statkute, G. (author)
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- (creator_code:org_t)
- 2008-09-29
- 2008
- English.
- In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 19:44
- Journal article (peer-reviewed)
Abstract
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- The use of tetraethyltin (TESn) and dimethylzinc (DMZn) as in situ n- and p-dopant precursors during particle-assisted growth of InP nanowires is reported. Gate voltage dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires can be characterized based on their electric field response and we find that n- type doping scales over a range from 10(17) to 10(19) cm(-3) with increasing input TESn dopant molar fraction. On the other hand, the p-type doping using DMZn saturates at low levels, probably related to a strong increase in nanowire growth rate with increasing DMZn molar fractions. By optimizing growth conditions with respect to tapering, axial pn-junctions exhibiting rectifying behavior were fabricated. The pn-junctions can be operated as light emitting diodes.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
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- Statkute, G.
- Ramvall, Peter
- Deppert, Knut
- Samuelson, Lars
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