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A 175uW 100MHz-2GHz...
A 175uW 100MHz-2GHz inductorless receiver frontend in 65nm CMOS
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- Bryant, Carl (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Sjöland, Henrik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2010
- 2010
- English 4 s.
- Related links:
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https://lup.lub.lu.s...
Abstract
Subject headings
Close
- This paper presents an inductorless ultra-low power frontend for applications such as sensor networks and medical implants. By using a completely inductorless topology the chip area is just 0.017mm2, excluding pads. A real input impedance of 300Ω is achieved with current feedback. Manufactured in 65nm CMOS, it measures more than 17dB gain from 100MHz to 2000MHz while consuming only 175μW from a 0.9V supply (The LNA consumes 115μW). The measured noise figure and IIP3 is 11dB and -16.8dBm respectively.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- impedance matching
- Low Noise Amplifier
- CMOS
- Mixer
- LNA
- inductorless
- ultra low power
- Front-end
Publication and Content Type
- kon (subject category)
- ref (subject category)
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