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Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors

Linten, D (author)
Sun, X (author)
Carchon, G (author)
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Jeamsaksiri, W (author)
Mercha, A (author)
Ramos, J (author)
Jenei, S (author)
Wambacq, P (author)
Dehan, M (author)
Aspemyr, Lars (author)
Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
Scholten, AJ (author)
Decoutere, S (author)
Donnay, S (author)
De Raedt, W (author)
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 (creator_code:org_t)
2005
2005
English.
In: IEEE Journal of Solid-State Circuits. - 0018-9200. ; 40:9, s. 1922-1931
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Wafer-level packaging (WLP) technology offers novel opportunities for the realization of high-quality on-chip passives needed in RF front-ends. This paper demonstrates a thin-film WLP technology on top of a 90-nm RF CMOS process with one 15-GHz and two low-power 5-GHz voltage-controlled oscillators (VCOs) using a high-quality WLP or above-IC inductor. The 5-GHz VCOs have a power consumption of 0.33 mW and a phase noise of - 115 dBc/Hz and -111 dBc/Hz; at 1-MHz offset, respectively, and the 15-GHz VCO has a phase noise of -105 dBc/Hz at 1-MHz offset with a power consumption of 2.76 mW.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

oscillator (VCO)
voltage-controlled
radio frequency (RF)
inductor
above IC
CMOS
wafer-level packaging (WLP)

Publication and Content Type

art (subject category)
ref (subject category)

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