Isolating single selected quantum dots using cryogenic photolithography

• We propose and demonstrate a technique combining micro-photoluminescence imaging with scanning photolithography at Cryogenic temperatures for creating photoresist masks at designated locations relative to single selected self-assembled quantum dots. The technique is demonstrated by producing a photoresist mask on top of a single selected InP quantum dot imbedded in GaInP. A mesa containing the quantum dot is then created by wet chemical etching. The combination of micro-photoluminescence and scanning photolithography relies on the use of two different lasers with a micro-photoluminescence setup, each laser having different power, focusing and wavelength. The resulting structure enables many experiments and applications in the emerging field of single quantum dot physics.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Wet chemical etching

Publication and Content Type

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