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Carrier and field d...
Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
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Achermann, M (author)
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Morier-Genoud, F (author)
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- Seifert, Werner (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Wernersson, Lars-Erik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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Siegner, U (author)
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Keller, U (author)
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(creator_code:org_t)
- 2002
- 2002
- English.
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 65:4
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http://dx.doi.org/10...
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Abstract
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- We present femtosecond-resolved optical near-field pump-probe measurements of spatiotemporal carrier dynamics around a single nanoscale tungsten (W) disk embedded in GaAs. In these samples, Schottky contacts are formed at the W/GaAs interface. The experimental results are modeled by a selfconsistent treatment of the drift-diffusion equation for the carriers and Poisson's equation for the built-in electric field. At lower optically excited carrier densities, we observe that the built-in field suppresses electron transport towards and trapping into the metal particles. In this regime, an accumulation of carriers is seen at the edge of the depletion region of the Schottky contacts. The calculation reveals that the formation of a self-induced dynamic potential well is the origin of this result. In the high-density regime, efficient carrier transport towards and trapping into the W nanoparticle take place, resulting from the screening of the built-in field. These results allow us to describe measurements of the carrier dynamics in annealed low-temperature grown GaAs and demonstrate that the coupling of the carrier and field dynamics can substantially affect carrier trapping in metal-semiconductor composite materials.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- ref (subject category)
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