Search: onr:"swepub:oai:lup.lub.lu.se:1cb1b600-352a-4a2a-b0e5-901443887e77" >
Bi ultra-thin cryst...
Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study
-
- Nicolaï, L. (author)
- University of West Bohemia
-
- Mariot, J. M. (author)
- Synchrotron SOLEIL,Paris-Sorbonne University
-
- Djukic, U. (author)
- Université de Cergy-Pontoise
-
show more...
-
- Wang, W. (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
-
- Heckmann, O. (author)
- Université de Cergy-Pontoise,University of Paris-Saclay
-
- Richter, M. C. (author)
- Université de Cergy-Pontoise,University of Paris-Saclay
-
- Kanski, J. (author)
- Chalmers University of Technology
-
- Leandersson, M. (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
-
- Balasubramanian, T. (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
-
- Sadowski, J. (author)
- Linnaeus University,University of Warsaw,Institute of Physics of the Polish Academy of Sciences
-
- Braun, J. (author)
- Ludwig-Maximilian University of Munich
-
- Ebert, H. (author)
- Ludwig-Maximilian University of Munich
-
- Vobornik, I. (author)
- CNR Istituto Officina dei Materiali (IOM)
-
- Fujii, J. (author)
- CNR Istituto Officina dei Materiali (IOM)
-
- Minár, J. (author)
- University of West Bohemia
-
- Hricovini, K. (author)
- University of Paris-Saclay,Université de Cergy-Pontoise
-
show less...
-
(creator_code:org_t)
- 2019-12-12
- 2019
- English.
-
In: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 21:12
- Related links:
-
http://dx.doi.org/10... (free)
-
show more...
-
https://doi.org/10.1...
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(1 1 1) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of ≈10 bi-layers on the A face is identical to that of bulk Bi, while more than ≈30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the Γ&bar; point of the Brillouin zone.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- angle-resolved photoemission
- bismuth
- circular dichroism
- electronic structure calculations
- growth
- indium arsenide
- ultra-thin films
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database
- By the author/editor
-
Nicolaï, L.
-
Mariot, J. M.
-
Djukic, U.
-
Wang, W.
-
Heckmann, O.
-
Richter, M. C.
-
show more...
-
Kanski, J.
-
Leandersson, M.
-
Balasubramanian, ...
-
Sadowski, J.
-
Braun, J.
-
Ebert, H.
-
Vobornik, I.
-
Fujii, J.
-
Minár, J.
-
Hricovini, K.
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Condensed Matter ...
- Articles in the publication
-
New Journal of P ...
- By the university
-
Lund University