Temperature and annealing effects on InAs nanowire MOSFETs

• We report on temperature dependence on the drive current as well as long-term effects of annealing in vertical InAs nanowire Field-Effect Transistors. Negatively charged traps in the HfO2 gate dielectric are suggested as one major factor in explaining the effects observed in the transistor characteristics. An energy barrier may be correlated with an un-gated InAs nanowire region covered with HfO2 and the effects of annealing may be explained by changed charging on defects in the oxide. Initial simulations confirm the general effects on the I-V characteristics by including fixed charge. (c) 2011 Elsevier B.V. All rights reserved.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

InAs

Nanowire

FET

High-k

HfO2

MOSFET

III-V semiconductor

Annealing

Publication and Content Type

kon (subject category)

ref (subject category)