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Free carrier absorption and inter-subband transitions in imperfect heterostructures

Ndebeka-Bandou, C. (author)
Paris Diderot University
Carosella, F. (author)
Lund University
Ferreira, R. (author)
Lund University
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Wacker, Andreas (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Matematisk fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Mathematical Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Bastard, G. (author)
Paris Diderot University,Technical University Vienna (TU Wien)
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 (creator_code:org_t)
2014-01-15
2014
English.
In: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 29:2
  • Research review (peer-reviewed)
Abstract Subject headings
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  • We present the results of a quantum mechanical modelling of the free carrier absorption (FCA) in semiconductor heterolayers. Elastic and inelastic scatterers are considered with emphasis on the interface defects (optical phonons) contributions to the induced photon absorption for elastic (inelastic) scatterers. Various approaches to FCA are also presented (perturbation, Green's function technique). The connection between inter-subband absorption and FCA is thoroughly discussed. The absorption lineshape and its modification by suitable doping is presented.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

absorption
intraband
heterostructure

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Ndebeka-Bandou, ...
Carosella, F.
Ferreira, R.
Wacker, Andreas
Bastard, G.
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