Performance evaluation of N-well/P-sub photodiodes in 65nm CMOS process

Ahmad, WaqasLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH (author)

This work explores the n-well/p-substrate photodiode in a deep submicron CMOS process. A CMOS chip is designed featuring different structures of the photodiode. When characterized at a wavelength of 850nm DC responsivities between 0.12 and 0.16 A/W and 3-dB bandwidths of about 6 MHz with a roll-off of about 5.5dB/decade are measured. These investigations are very useful in designing the transimpedance amplifier and equalizer for a fully integrated optical receiver. According to the authors’ knowledge it is the first reported study on n-well/p-sub photodiodes in a 65nm CMOS technology.

Törmänen, MarkusLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)es-mto (author)
Sjöland, HenrikLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)tde-hsj (author)
Institutionen för elektro- och informationsteknikInstitutioner vid LTH (creator_code:org_t)

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