A method for estimating defects in ferroelectric thin film MOSCAPs

• We propose a capacitance measurement scheme that enables quantitative characterization of ferroelectric thin films integrated onsemiconductors. The film defect density is estimated by measurements of the CV hysteresis and frequency dispersion, whereas importantdevice parameters such as memory window and endurance can be extracted by a unidirectional CV method. The simple measurementscheme and the usage of metal-oxide-semiconductor capacitors rather than MOSFETs make the proposed methods suitable for the futureoptimization of ferroelectric field effect transistor and negative capacitance field effect transistor gate stacks. Specifically, we present data forthe narrow bandgap semiconductor InAs and show that low temperature characterization is critical to reduce the influence of the minoritycarrier response; however, the methods should be transferrable to room temperature for semiconductors with a wider bandgap. Our resultsclearly indicate that the defect density of the HfxZr1xO2 (HZO) films increases at the crystallization temperature, but the increase is modestand remains independent of the annealing temperature at even more elevated temperatures. It is also shown that the shrinkage of thememory window caused by field cycling is not accompanied by an increase in defect density.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)

Publication and Content Type

art (subject category)

ref (subject category)