Search: onr:"swepub:oai:lup.lub.lu.se:2b5ef494-9017-4e22-b010-816545299a36" >
Atomic-Resolution S...
Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires
-
- Zamani, Reza R. (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
- Hage, Fredrik S. (author)
- SuperSTEM Laboratory
-
- Lehmann, Sebastian (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
-
show more...
-
- Ramasse, Quentin M. (author)
- SuperSTEM Laboratory
-
- Dick, Kimberly A. (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Faculty of Engineering, LTH
-
show less...
-
(creator_code:org_t)
- 2017-11-08
- 2018
- English 7 s.
-
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 18:3, s. 1557-1563
- Related links:
-
http://dx.doi.org/10...
-
show more...
-
http://eprints.gla.a...
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Keyword
- aberration-corrected STEM
- atomic-resolution EELS
- GaSb-InAs
- heterointerface
- III-V nanowire
- spectrum imaging
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database