Low power 0.18μm CMOS dual-band front-end

• A dual-band CMOS front-end was designed and fabricated in a 0.18 μm CMOS process. The front-end employs a common-gate low noise amplifier (LNA) with capacitive cross coupling (CCC) technique and a passive mixer. The band selection is performed by switching a capacitor in and out of the LNA load, changing the resonance frequency between 2.2GHz and 4.0GHz. The measured noise figure is below 3.5dB for both frequency bands for supply voltages from 1.8V down to 1V. The conversion gain is more than 10dB, and the third order intercept point (IIPs) is above -6dBm. The circuit draws 2.4mA from a 1V supply

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

common-gate low noise amplifier

CMOS dual-band front-end

capacitive cross coupling

passive mixer

capacitor switching

2.4 mA

resonance frequency

2.2 to 4 GHz

0.18 micron

1.8 V

1 V

Publication and Content Type

kon (subject category)

ref (subject category)