Evidence of stacking-fault distribution along an InAs nanowire using micro-focused coherent X-ray diffraction

• InAs nanowire samples grown by metal-organic chemical vapor deposition present a significant amount of wurtzite structure, while the zincblende lattice is known to be the stable crystal structure for the bulk material. The question of the wurtzite distribution in the sample is addressed using phase-sensitive coherent X-ray diffraction with a micro-focused beam at a synchrotron source. The simultaneous investigation of the wurtzite 10 (1) over bar0, 10 (2) over bar0, 10 (3) over bar0 reflections performed on a bunch of single wires shows unambiguously that the wurtzite contribution is a result of stacking faults distributed along the wire. Additional simulations lead to adjustments of the wire structural parameters, such as the wurtzite content, the strain distribution, the wire diameters and their respective orientations.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

stacking faults

InAs

nanowires

micro-focusing

coherent X-ray diffraction

synchrotron radiation

Publication and Content Type

art (subject category)

ref (subject category)