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850/900/1800/1900MH...
850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier
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Aniktar, H (author)
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- Sjöland, Henrik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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H, Mikkelsen, J (author)
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Larsen, T (author)
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(creator_code:org_t)
- 2006
- 2006
- English.
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In: Proceedings of European Microwave Week 2006. ; , s. 403-406
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Abstract
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- This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- kon (subject category)
- ref (subject category)
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