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Remnant magnetoresi...
Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures
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Figielski, T. (author)
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Wosinski, T. (author)
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Morawski, A. (author)
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Makosa, A. (author)
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Wrobel, J. (author)
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- Sadowski, Janusz (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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(creator_code:org_t)
- AIP Publishing, 2007
- 2007
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 90:5
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http://dx.doi.org/10...
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Abstract
Subject headings
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- The authors show a magnetoresistive effect that appears in a lithographically shaped, three-arm nanostructure fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, is revealed as a dependence of zero-field resistance on the direction of the previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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