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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 03584naa a2200433 4500 | |
| 001 | oai:lup.lub.lu.se:3524c188-4755-4594-af47-83a45c8824cc | |
| 003 | SwePub | |
| 008 | 160401s2016 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://lup.lub.lu.se/record/87480432 URI |
| 024 | 7 | a https://doi.org/10.1021/acs.nanolett.5b034962 DOI |
| 040 | a (SwePub)lu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a art2 swepub-publicationtype |
| 072 | 7 | a ref2 swepub-contenttype |
| 100 | 1 | a Hultin, Olofu Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)ftf-ohn |
| 245 | 1 0 | a Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire |
| 264 | c 2015-12-16 | |
| 264 | 1 | b American Chemical Society (ACS),c 2016 |
| 520 | a We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Nanoteknikx Nanoteknik0 (SwePub)210012 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Nano-technologyx Nano-technology0 (SwePub)210012 hsv//eng |
| 650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
| 653 | a Nanowire | |
| 653 | a doping | |
| 653 | a Hall effect | |
| 653 | a field effect | |
| 653 | a electrical characterization | |
| 700 | 1 | a Otnes, Gauteu Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)ftf-goe |
| 700 | 1 | a Borgström, Magnusu Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)ftf-mbo |
| 700 | 1 | a Bjork, Mikael4 aut |
| 700 | 1 | a Samuelson, Larsu Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)ftf-lsa |
| 700 | 1 | a Storm, Kristianu Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH4 aut0 (Swepub:lu)ftf-ktn |
| 710 | 2 | a Fasta tillståndets fysikb Fysiska institutionen4 org |
| 773 | 0 | t Nano Lettersd : American Chemical Society (ACS)g 16:1, s. 205-211q 16:1<205-211x 1530-6992x 1530-6984 |
| 856 | 4 | u http://dx.doi.org/10.1021/acs.nanolett.5b03496y FULLTEXT |
| 856 | 4 8 | u https://lup.lub.lu.se/record/8748043 |
| 856 | 4 8 | u https://doi.org/10.1021/acs.nanolett.5b03496 |
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