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Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
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- Lind, Erik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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- Persson, Ann (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- (creator_code:org_t)
- 2006-08-16
- 2006
- English.
- In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 6:9, s. 1842-1846
- Journal article (peer-reviewed)
Abstract
Subject headings
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- An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10 000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive. A single nanowire heterostructure transistor has a transconductance of 5 mu A/V at a low source-drain voltage of 0.3 V. For the homogeneous InAs transistor, we deduced a high electron mobility of 1500 cm(2)/Vs.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
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