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Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.

Wu, Han-Chun (author)
Chaika, Alexander N (author)
Huang, Tsung-Wei (author)
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Syrlybekov, Askar (author)
Abid, Mourad (author)
Aristov, Victor Yu (author)
Molodtsova, Olga V (author)
Babenkov, Sergey V (author)
Marchenko, D (author)
Sánchez-Barriga, Jaime (author)
Mandal, Partha Sarathi (author)
Varykhalov, Andrei Yu (author)
Niu, Yuran (author)
Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
Murphy, Barry E (author)
Krasnikov, Sergey A (author)
Lübben, Olaf (author)
Wang, Jing Jing (author)
Liu, Huajun (author)
Yang, Li (author)
Zhang, Hongzhou (author)
Abid, Mohamed (author)
Janabi, Yahya T (author)
Molotkov, Sergei N (author)
Chang, Ching-Ray (author)
Shvets, Igor (author)
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 (creator_code:org_t)
2015-08-27
2015
English.
In: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 9:9, s. 8967-8975
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology -- Nano-technology (hsv//eng)

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