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Transport Gap Openi...
Transport Gap Opening and High On-Off Current Ratio in Trilayer Graphene with Self-Aligned Nanodomain Boundaries.
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Wu, Han-Chun (author)
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Chaika, Alexander N (author)
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Huang, Tsung-Wei (author)
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Syrlybekov, Askar (author)
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Abid, Mourad (author)
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Aristov, Victor Yu (author)
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Molodtsova, Olga V (author)
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Babenkov, Sergey V (author)
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Marchenko, D (author)
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Sánchez-Barriga, Jaime (author)
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Mandal, Partha Sarathi (author)
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Varykhalov, Andrei Yu (author)
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- Niu, Yuran (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Murphy, Barry E (author)
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Krasnikov, Sergey A (author)
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Lübben, Olaf (author)
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Wang, Jing Jing (author)
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Liu, Huajun (author)
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Yang, Li (author)
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Zhang, Hongzhou (author)
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Abid, Mohamed (author)
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Janabi, Yahya T (author)
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Molotkov, Sergei N (author)
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Chang, Ching-Ray (author)
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Shvets, Igor (author)
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(creator_code:org_t)
- 2015-08-27
- 2015
- English.
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In: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 9:9, s. 8967-8975
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Abstract
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- Trilayer graphene exhibits exceptional electronic properties that are of interest both for fundamental science and for technological applications. The ability to achieve a high on-off current ratio is the central question in this field. Here, we propose a simple method to achieve a current on-off ratio of 10(4) by opening a transport gap in Bernal-stacked trilayer graphene. We synthesized Bernal-stacked trilayer graphene with self-aligned periodic nanodomain boundaries (NBs) on the technologically relevant vicinal cubic-SiC(001) substrate and performed electrical measurements. Our low-temperature transport measurements clearly demonstrate that the self-aligned periodic NBs can induce a charge transport gap greater than 1.3 eV. More remarkably, the transport gap of ∼0.4 eV persists even at 100 K. Our results show the feasibility of creating new electronic nanostructures with high on-off current ratios using graphene on cubic-SiC.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
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- ref (subject category)
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ACS Nano
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Wu, Han-Chun
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Chaika, Alexande ...
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Huang, Tsung-Wei
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Syrlybekov, Aska ...
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Abid, Mourad
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Aristov, Victor ...
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show more...
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Molodtsova, Olga ...
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Babenkov, Sergey ...
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Marchenko, D
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Sánchez-Barriga, ...
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Mandal, Partha S ...
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Varykhalov, Andr ...
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Niu, Yuran
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Murphy, Barry E
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Krasnikov, Serge ...
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Lübben, Olaf
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Wang, Jing Jing
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Liu, Huajun
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Yang, Li
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Zhang, Hongzhou
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Abid, Mohamed
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Janabi, Yahya T
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Molotkov, Sergei ...
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Chang, Ching-Ray
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Shvets, Igor
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show less...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
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and Nano technology
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ACS Nano
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Lund University