A resonant tunneling permeable base transistor with Al-free tunneling barriers

• Summary form only given. Resonant tunneling based devices are an intriguing set of devices with promising high speed, low power and high functionality capabilities. We have developed an technology to embed metallic features on the nm-scale inside a semiconductor. By combining such metallic features and heterostructures we have developed a new type of tunneling transistor, the so called Resonant Tunneling Permeable Base Transistor (RT-PBT), where a double barrier heterostructure is placed in close vicinity to a metal grating. A three step fabrication process is described

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

GaAsP/GaAs/GaAsP heterostructure

20 to 100 GHz

double barrier heterostructure

metal grating

lift-off

Al-free tunneling barriers

resonant tunneling permeable base transistor

RT-PBT

resonant tunneling PBT

three step fabrication process

MOVPE

W features

electron beam lithography

GaAsP-GaAs-GaAsP

W

Publication and Content Type

kon (subject category)

ref (subject category)