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Scanning Photoelectron Spectro-Microscopy : A Modern Tool for the Study of Materials at the Nanoscale

Zeller, Patrick (author)
Elettra Sincrotrone Trieste
Amati, Matteo (author)
Elettra Sincrotrone Trieste
Sezen, Hikmet (author)
Helmholtz Association of German Research Centers
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Scardamaglia, Mattia (author)
University of Mons
Struzzi, Claudia (author)
Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory,University of Mons
Bittencourt, Carla (author)
University of Mons
Lantz, Gabriel (author)
University of Paris-Saclay
Hajlaoui, Mahdi (author)
University of Paris-Saclay
Papalazarou, Evangelos (author)
University of Paris-Saclay
Marino, Marsi (author)
University of Paris-Saclay
Fanetti, Mattia (author)
Elettra Sincrotrone Trieste,University of Nova Gorica
Ambrosini, Stefano (author)
CNR Istituto Officina dei Materiali (IOM),University of Trieste
Rubini, Silvia (author)
CNR Istituto Officina dei Materiali (IOM)
Gregoratti, Luca (author)
Elettra Sincrotrone Trieste
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 (creator_code:org_t)
2018-08-21
2018
English.
In: Physica Status Solidi (A) Applications and Materials Science. - : Wiley. - 1862-6300. ; 215:19
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The advanced properties of modern materials originate from their nanoscale size and shape and from chemical modifications or doping. Special techniques that can measure the chemical state in the nanoscale are required for exploration and understanding the properties of these materials. While X-ray photoelectron spectroscopy (XPS) can access the necessary chemical information, conventional setups have no spatial resolution. The scanning photoelectron microscope (SPEM) takes in advent the third generation synchrotron radiation facilities and uses a zone plate (ZP) focusing optics that allows spatially resolved XPS measurements in the submicron scale. Several recent examples of investigations of chemically modified or doped nanomaterials are given. The modification of suspended and supported graphene with nitrogen and fluorine is presented as well as the doping dependent position of the Fermi-level in single GsAs nanowires and the Mott–Hubbard transition in Cr-doped vanadium oxide. These examples show several peculiar SPEM abilities like a high surface and chemical sensitivity and a submicron spatial resolution proving the capability and importance of this technique to study materials at the nanoscale.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

graphene
Mott–Hubbard transition
scanning photoemission microscopy
semiconductor nanowires
X-ray photoelectron spectroscopy

Publication and Content Type

art (subject category)
ref (subject category)

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