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Correlation lengths...
Correlation lengths in stacked InAs quantum dot systems studied by cross-sectional scanning tunnelling microscopy
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- Ouattara, Lassana (author)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Ulloa, J. M. (author)
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- Mikkelsen, Anders (author)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Lundgren, Edvin (author)
- Lund University,Lunds universitet,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Koenraad, P. M. (author)
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- Borgström, Magnus (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Seifert, Werner (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2007-03-06
- 2007
- English.
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:14
- Related links:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We have studied the influence of the InP spacer layer thickness on stacked InAs/InP quantum dots, using cross-sectional scanning tunnelling microscopy. We show that for a spacer layer thickness of up to 30 nm, the quantum dots are spatially correlated but for a separating distance of 50 nm the vertical ordering of the dots is lost. These values are the same as previously found for quantum dots in the InAs/GaAs system despite the large difference in lattice mismatch between the InAs/GaAs ( 7%) and InAs/InP ( 3%) systems. We show that the apparent similarities can be understood by a combination of intermixing in the dots and differences in dot size. Finally, we demonstrate that the size of the quantum dots is affected by their vertical correlation.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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