Creation of MnAs nanoclusters during processing of GaMnAs

Bak-Misiuk, J. (author)

Domagala, J. Z. (author)

Romanowski, P. (author)

Dynowska, E. (author)

Lusakowska, E. (author)

Misiuk, A. (author)

Paszkowicz, W. (author)

Sadowski, Janusz (author): Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory

Barcz, A. (author)

Caliebe, W. (author)

(creator_code:org_t)

Elsevier BV, 2009
2009
English.
In: Radiation Physics And Chemistry. - : Elsevier BV. - 0969-806X. ; 78, s. 116-119

Related links:: http://dx.doi.org/10...; show more...; https://lup.lub.lu.s...; https://doi.org/10.1...; show less...

Abstract Subject headings

GaMnAs layers on (0 0 1)-oriented GaAs substrates were grown by the molecular beam epitaxy (MBE) method. Structural properties of samples processed at up to 920 K under hydrostatic Ar pressure up to 1.1 GPa were investigated by X-ray, secondary ion mass spectroscopy and atomic force microscopy methods. The sign of strain (compressive or tensile) of the GaMnAs layers, related to a creation of MnAs nanoclusters, is found to be dependent on processing conditions and on primary structure defects, whereas it was independent of Mn concentration. An influence of the defects structure in as-grown samples on the strain state of processed GaMnAs layers is discussed. (C) 2009 Elsevier Ltd. All rights reserved.

By the author/editor: Bak-Misiuk, J.; Domagala, J. Z.; Romanowski, P.; Dynowska, E.; Lusakowska, E.; Misiuk, A.; show more...; Paszkowicz, W.; Sadowski, Janusz; Barcz, A.; Caliebe, W.; show less...

About the subject

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.