Crystal Phases in III-V Nanowires: From Random Toward Engineered Polytypism

• III-V nanowires (NWs) are promising for a wide range of applications, ranging from optics to electronics, energy, and biological sensing. The structural quality of NWs is of paramount importance for the performance of such future NW-based devices. Random structural defects and polytypism occur naturally in semiconductor NWs, but progress both on the theoretical understanding and experimental control have been achieved recently. Here, we review progress towards the realization of perfect wurtzite and zinc-blende phases in III-VNWs, eventually leading to true phase engineering in single NWs.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Gold-assisted vapor-liquid-solid (VLS) growth

III-V nanowires (NWs)

metalorganic vapor phase epitaxy (MOVPE)

molecular beam epitaxy (MBE)

nucleation kinetics modeling

polytypism

stacking faults (SFs)

thermodynamic modeling

twin plane (TP)

wurtzite (WZ)

zinc blende (ZB)

Publication and Content Type

art (subject category)

ref (subject category)