Search: onr:"swepub:oai:lup.lub.lu.se:4b51c47e-1bc7-4360-b421-8e29dbbc9dd1" >
Growth of InAs NWs ...
Growth of InAs NWs with controlled morphology by CVD
-
- Huang, Y. S. (author)
- Peking University
-
- Li, M. (author)
- Peking University
-
- Wang, J. (author)
- Peking University
-
show more...
-
- Xing, Y. (author)
- Peking University
-
- Xu, H. Q. (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Peking University
-
show less...
-
(creator_code:org_t)
- 2017-08-15
- 2017
- English.
-
In: Journal of Physics: Conference Series. - : IOP Publishing. - 1742-6588 .- 1742-6596. ; 864:1
- Related links:
-
http://dx.doi.org/10... (free)
-
show more...
-
https://doi.org/10.1...
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database