Resonant Tunneling Permeable Base Transistor for RF applications

• A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

molecular beam epitaxy

double barrier heterostructure

room temperature

semiconductor heterostructure

metallic elements

resonant tunneling permeable base transistor

tungsten

W

AlGaAs-InGaAs

30 nm

293 to 298 K

electron beam lithography

Publication and Content Type

kon (subject category)

ref (subject category)