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Electrically active defects in Al2O3-InGaAs MOS stacks at cryogenic temperatures
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- La Torraca, Paolo (author)
- Tyndall National Institute,University of Modena and Reggio Emilia
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- Padovani, Andrea (author)
- University of Modena and Reggio Emilia
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- Wernersson, Lars Erik (author)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LTH profilområde: AI och digitalisering,Other operations, LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LTH Profile Area: AI and Digitalization,Faculty of Engineering, LTH
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- Larcher, Luca (author)
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- (creator_code:org_t)
- 2023
- 2023
- English.
- In: 2023 IEEE International Integrated Reliability Workshop, IIRW 2023. - 1930-8841 .- 2374-8036. - 9798350327274
- Conference paper (peer-reviewed)
Abstract
Subject headings
Close
- The effects of defects in In0.47Ga0.53As/Al2O3/Ni metal-oxide-semiconductor (MOS) stacks at cryogenic temperatures are investigated. The MOS stacks exhibit a hysteresis in the capacitance-voltage (CV) curve, both at room temperature and at 100K, indicating the presence of effective charge capture/emission dynamics in the oxide even at cryogenic temperatures. Border traps (BTs) in the Al2O3 close to the In0.47Ga0.53As/Al2O3 interface are recognized as the best candidate for explaining the experimental CV. The hysteresis shape and its temperature dependence are used to profile the oxide defects' properties, which allow correctly predicting the MOS stacks CV and conductance-voltage (GV) frequency dispersions and gaining insights on the hysteresis dynamics.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- AlO
- capacitance
- cryogenic
- hysteresis
- InGaAs
Publication and Content Type
- kon (subject category)
- ref (subject category)
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- 2023 IEEE International Integrated Reliability Workshop, IIRW 2023 (Search for host publication in LIBRIS)
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