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  • Kumar, SandeepDepartment of Physics, Central University of Rajasthan, Ajmer, India (author)

Evaluation of carrier density and mobility in Mn ion-implanted GaAs:Zn nanowires by Raman spectroscopy

  • Article/chapterEnglish2020

Publisher, publication year, extent ...

  • 2020-02-27
  • Bristol :IOP Publishing,2020

Numbers

  • LIBRIS-ID:oai:lup.lub.lu.se:65177e5f-b062-408b-a673-c65bb51dcc69
  • https://lup.lub.lu.se/record/65177e5f-b062-408b-a673-c65bb51dcc69URI
  • https://doi.org/10.1088/1361-6528/ab70faDOI
  • https://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-43225URI

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  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • Funding text: Sandeep Kumar and Chandni Devi acknowledge the support by Department of Science and Technology (DST) under Grant No: YSS/2015/001403 and University Grant Commission for project No. (F4-5(112-FRP)/2014(BSR)). The Brazilian authors acknowledge, for financial support, from the national agencies CNPq, CAPES and FINEP
  • The fabrication of complex nanoscale electronics with reduced dimensions poses challenges on novel techniques to accurately determine fundamental electronic parameters. In this article, we present a universal contactless method based on Raman scattering for measuring the mobility and hole concentration independently in GaAs:Zn and Mn ion-implanted GaAs:Zn nanowires, potentially of great interest for spintronics applications. Clear coupled longitudinal optical phonon-plasmon modes were recorded and fitted with a dielectric function, based on the Drude model, which includes contributions from both plasmons and phonons. From the fitting, we extract accurate values of the plasma frequency and plasma damping constant from which we directly calculate the hole density and mobility, respectively. The extracted mobilities were also used as input data for analysis of complementary four-probe transport measurements, where the corresponding hole concentrations could be calculated and found to be in good agreement with those extracted directly from the Raman data. We also investigated the influence of annealing of the GaAs:Zn nanowires on the hole concentration and mobility and found strong indications of thermally activated defects related to a formed crystalline As/oxide shell around the nanowires. The method proposed here is extremely powerful for the characterization of nanoelectronics in general, and nanospintronics in particular for which Hall measurements are difficult to pursue due to problems related to contact formation, as well as to inherent magnetic properties of the devices.

Subject headings and genre

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  • Corrêa, Gregório B.Federal University of Pará,Federal Institute Of Education, Science And Technology Of Ceará,Programa de Pós-Graduação em Física, Universidade Federal Do Pará, Belém, PA, Brazil & Instituto Federal de Educação, Ciência e Tecnologia Do Pará, Abaetetuba, PA, Brazil (author)
  • Devi, ChandniDepartment of Physics, Central University of Rajasthan, Ajmer, India (author)
  • Jacobsson, DanielLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis, Lund University, Lund, Sweden(Swepub:lu)ftf-dlj (author)
  • Johannes, AndreasInstitut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Jena, Germany (author)
  • Ronning, CarstenInstitut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Jena, Germany (author)
  • Paraguassu, WaldeciFederal University of Pará,Programa de Pós-Graduação em Física, Universidade Federal Do Pará, Belém, Brazil (author)
  • Paschoal, WaldomiroFederal University of Pará,Programa de Pós-Graduação em Física, Universidade Federal Do Pará, Belém, Brazil(Swepub:lu)ftf-wdp (author)
  • Pettersson, HakanHögskolan i Halmstad,Halmstad University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Halmstad Embedded and Intelligent Systems Research (EIS),Solid State Physics and NanoLund, Lund University, Lund, Sweden(Swepub:hh)hape (author)
  • Department of Physics, Central University of Rajasthan, Ajmer, IndiaFederal University of Pará (creator_code:org_t)

Related titles

  • In:NanotechnologyBristol : IOP Publishing31:200957-44841361-6528

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