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Electronic structure of epitaxial half-Heusler Co1-xNixTiSb across the semiconductor to metal transition

Harrington, S. D. (author)
University of California, Santa Barbara
Logan, J. A. (author)
University of California, Santa Barbara
Chatterjee, S. (author)
University of California, Santa Barbara
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Patel, S. J. (author)
University of California, Santa Barbara
Rice, A. D. (author)
University of California, Santa Barbara
Feldman, M. M. (author)
University of California, Santa Barbara
Polley, C. M. (author)
Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
Balasubramanian, T. (author)
Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
Mikkelsen, A. (author)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Synkrotronljusfysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Synchrotron Radiation Research,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Palmstrøm, C. J. (author)
University of California, Santa Barbara
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 (creator_code:org_t)
AIP Publishing, 2018
2018
English.
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 113:9
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  • Journal article (peer-reviewed)
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  • Here, we report on the growth, electronic, and surface properties of the electron-doped half-Heusler series Co1-xNixTiSb (001) grown by molecular beam epitaxy. High-quality epitaxial growth of thin films is achieved on InP (001) substrates using an InAlAs buffer layer for all nickel concentrations. The semiconductor to metal transition as a function of substitutional alloying was examined using electrical transport, Seebeck measurements, and angle-resolved photoemission spectroscopy (ARPES). Temperature-dependent electrical transport measurements of films with composition x ≤ 0.1 exhibit thermally activated behavior while x > 0.1 exhibit metallic behavior. Smooth, highly ordered film surfaces can be achieved following ex-situ transfer of the films and subsequent desorption of a sacrificial, protective antimony capping layer. Using this transfer technique, ARPES experiments were performed to investigate the effects of nickel alloying on the electronic band structure. An electron pocket is observed below the Fermi level at the bulk X point for compositions x > 0.1, in accordance with the crossover from semiconducting to metallic behavior observed in the transport measurements.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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