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Abstract
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- Extended X-ray absorption fine structure measurements have been used to characterize, at the atomic level, the thermally induced structural relaxation of InAs amorphized by ion implantation. Our results are consistent with a relaxation mechanism mediated by point-defect annihilation with concomitant reduction in both chemical and structural disorder. Though relaxation yields a decrease in chemical disorder, homopolar bonding is still retained in the fully relaxed amorphous structure. (C) 2003 Elsevier Science B.V. All rights reserved.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Keyword
- amorphous solids
- ion implantation
- InAs
- EXAFS
Publication and Content Type
- art (subject category)
- ref (subject category)
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