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Large area quasi-fr...
Large area quasi-free standing monolayer graphene on 3C-SiC(111)
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Coletti, C. (author)
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Emtsev, K. V. (author)
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- Zakharov, Alexei (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Ouisse, T. (author)
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Chaussende, D. (author)
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Starke, U. (author)
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(creator_code:org_t)
- AIP Publishing, 2011
- 2011
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 99:8
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Abstract
Subject headings
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- Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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