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An 88% fractional b...
An 88% fractional bandwidth reconfigurable power amplifier for NB-IoT and LTE-M in 22 nm CMOS FDSOI
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- Behmanesh, Baktash (author)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Lunds Tekniska Högskola,LTH profilområde: AI och digitalisering,LTH profilområde: Teknik för hälsa,Integrated Electronic Systems,Lund University Research Groups,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LTH Profile Area: AI and Digitalization,Faculty of Engineering, LTH,LTH Profile Area: Engineering Health,Faculty of Engineering, LTH
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- Rodrigues, Joachim (author)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Lunds Tekniska Högskola,LTH profilområde: AI och digitalisering,LTH profilområde: Teknik för hälsa,Integrated Electronic Systems,Lund University Research Groups,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LTH Profile Area: AI and Digitalization,Faculty of Engineering, LTH,LTH Profile Area: Engineering Health,Faculty of Engineering, LTH
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- Sjöland, Henrik (author)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Lunds Tekniska Högskola,LTH profilområde: AI och digitalisering,Integrated Electronic Systems,Lund University Research Groups,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LTH Profile Area: AI and Digitalization,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2022
- 2022
- English.
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In: 2022 IEEE Nordic Circuits and Systems Conference (NorCAS). - 9798350345513 - 9798350345506
- Related links:
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http://dx.doi.org/10...
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Abstract
Subject headings
Close
- A wideband power amplifier (PA), with 88% fractional bandwidth operating in the 700 MHz to 1.8 GHz range, which covers most of the standardized narrowband internet-of-things (NB-IoT) and LTE-M bands, is fully integrated in 22 nm CMOS FDSOI. A single-stage differential amplifier core, combined with an on-chip balun, realizes a single-ended output. A stacked circuit architecture, with 3.3 V LDMOS transistors as output devices and thin-oxide flipped-well transistors as the input common-source (CS) stage, enable a wide bandwidth and reliable operation at a supply voltage of 2.55 V. Capacitor banks with stacked thin-oxide transistor switches tune the PA frequency characteristics over the wide frequency range. The PA delivers a saturated output power (P sat ) of up to +24.4 dBm with up to 45% power-added efficiency, which is compliant with the current 3GPP standard for NB-IoT and LTE-M. The maximum power-gain varies between 30.7 dB and 29.2 dB over the whole frequency range. The PA core circuit occupies 0.32 mm 2 of silicon area, of which 0.2 mm 2 is occupied by the low loss balun.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Power Amplifiers, NB-IoT, LTE Cat-M1, IoT, CMOS integrated circuits, FDSOI
Publication and Content Type
- kon (subject category)
- ref (subject category)
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