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Centimeter-long III...
Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off
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- Dong, Jianqi (author)
- South China Normal University
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- Wang, Baoyu (author)
- South China Normal University
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- Zou, Xianshao (author)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Kemisk fysik,Enheten för fysikalisk och teoretisk kemi,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Chemical Physics,Physical and theoretical chemistry,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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- Zhao, Wei (author)
- Guangdong Academy of Sciences
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- He, Chenguang (author)
- Guangdong Academy of Sciences
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- He, Longfei (author)
- Guangdong Academy of Sciences
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- Wang, Qiao (author)
- Guangdong Academy of Sciences
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- Chen, Zhitao (author)
- Guangdong Academy of Sciences
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- Li, Shuti (author)
- South China Normal University
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- Zhang, Kang (author)
- Guangdong Academy of Sciences
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- Wang, Xingfu (author)
- South China Normal University
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(creator_code:org_t)
- Elsevier BV, 2020
- 2020
- English.
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In: Nano Energy. - : Elsevier BV. - 2211-2855. ; 78
- Related links:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Subject headings
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- It remains a big challenge to elongate one-dimensional (1D) semiconductor nanowires (NWs), which can be attractive platforms for miniaturizing and/or integrating macroscopic devices, into centimeter-scale length. Herein, we report the innovative preparation of single-crystalline III-nitride NWs, with unprecedented length above 2 cm and the aspect ratio above 6000, by graphically epitaxial lifting-off (GELO) the epitaxial films on sapphire. The proposed GELO technology involves isotropic dry etching and selectively electrochemical (EC) etching. Reaction kinetics study of the EC etching indicate that two-steps processes are included, which is, to our best knowledge, firstly revealed and experimentally confirmed. Centimeter-long freestanding NWs, with predesigned structure of homogeneous GaN, p-GaN/(InGaN/GaN)6 quantum-wells/n-GaN (simply InGaN/GaN QWs) and AlGaN/AlN/GaN heterostructure, are successfully obtained and exhibit superior morphological uniformity and robust flexibility. Optical properties of the released InGaN/GaN QW-NWs were well optimized owing to the relieved intrinsic strain. Random lasing behavior was unexpectedly observed by continuous-wave excitation of the individual InGaN/GaN QW-NW, with a low threshold of 232 kW•cm-2. This work represents a low-cost and economic approach to yield structure-engineerable super-long III-nitride NWs, which would promote the development and integration of optoelectronic nanodevices.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Graphically epitaxial lift-off
- III-Nitride
- Random laser
- Reaction kinetics
- Ultra-long nanowire
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Dong, Jianqi
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Wang, Baoyu
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Zou, Xianshao
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Zhao, Wei
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He, Chenguang
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He, Longfei
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show more...
-
Wang, Qiao
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Chen, Zhitao
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Li, Shuti
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Zhang, Kang
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Wang, Xingfu
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show less...
- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Nano Energy
- By the university
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Lund University