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Formation of epitaxial MnBi layers on (Ga,Mn)As
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- Adell, Johan (author)
- Chalmers University of Technology,Chalmers tekniska högskola
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- Adell, Martin, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Ulfat, Intikhab, 1966 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- (creator_code:org_t)
- 2009
- 2009
- English.
- In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121 .- 2469-9950 .- 2469-9969. ; 80:7
- Journal article (peer-reviewed)
Abstract
Subject headings
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- The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- semimagnetic semiconductors
- ferromagnetic materials
- surface reconstruction
- photoelectron spectra
- metallic epitaxial layers
- manganese compounds
- manganese alloys
- magnetic epitaxial layers
- magnetisation
- bismuth alloys
- gallium arsenide
- core levels
Publication and Content Type
- art (subject category)
- ref (subject category)
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