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  • Adell, JohanChalmers University of Technology,Chalmers tekniska högskola (author)

Formation of epitaxial MnBi layers on (Ga,Mn)As

  • Article/chapterEnglish2009

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  • 2009

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  • LIBRIS-ID:oai:lup.lub.lu.se:7cc007a2-8c35-4ce6-8f4f-2b8314041242
  • https://lup.lub.lu.se/record/1458071URI
  • https://doi.org/10.1103/PhysRevB.80.075204DOI
  • https://research.chalmers.se/publication/100123URI

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  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • The initial growth of MnBi on MnAs-terminated (GaMn)As is studied by means of synchrotron-based photoelectron spectroscopy. From analysis of surface core-level shifts we conclude that a continued epitaxial MnBi layer is formed, in which the MnAs/MnBi interface occurs between As and Bi atomic planes. The well-defined 1×2 surface reconstruction of the MnAs surface is preserved for up to 2 ML of MnBi before clear surface degradation occurs. The MnBi layer appears to be free from intermixed As.

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  • Adell, Martin,1976Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f1xma (author)
  • Ulfat, Intikhab,1966Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)intikhab (author)
  • Ilver, Lars,1949Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f1xli (author)
  • Sadowski, JanuszLund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory(Swepub:lu)maxl-jsa (author)
  • Kanski, Janusz,1946Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)f1xjk (author)
  • Chalmers University of TechnologyChalmers tekniska högskola (creator_code:org_t)

Related titles

  • In:Physical Review B (Condensed Matter and Materials Physics)80:71098-01212469-99502469-9969

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