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Periodically Changi...
Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires
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Wen, C. -Y. (author)
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Tersoff, J. (author)
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- Hillerich, Karla (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Reuter, M. C. (author)
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Park, J. H. (author)
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Kodambaka, S. (author)
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Stach, E. A. (author)
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Ross, F. M. (author)
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(creator_code:org_t)
- 2011
- 2011
- English.
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In: Physical Review Letters. - 1079-7114. ; 107:2
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Abstract
Subject headings
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- Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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