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A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier
- Aniktar, H (author)
-
- Sjöland, Henrik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
- H, Mikkelsen, J (author)
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- Larsen, T (author)
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- (creator_code:org_t)
- 2005
- 2005
- English.
- In: Proceedings of Norchip 2005.
- Conference paper (peer-reviewed)
Abstract
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- In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0:25¹m CMOS process. Measurements with a 2:5V supply voltage show an output power of 18:5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated and measured results agree reasonably well.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- Aniktar, H
- Sjöland, Henrik
- H, Mikkelsen, J
- Larsen, T
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