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- Lindström, PeterLund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH (author)
Design of resonant tunneling permeable base transistors
- Article/chapterEnglish2004
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- 2004
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- LIBRIS-ID:oai:lup.lub.lu.se:a13057d6-dd7d-4081-a2f1-1911efe4e78c
- https://lup.lub.lu.se/record/613448URI
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- Language:English
- Summary in:English
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- We evaluate the performance of resonant tunneling permeable base transistors (RT-PBTs) by numerical simulations. Since the current is limited by the barriers, a design with a low doping level around the embedded gate wires is chosen to improve the transconductance. We evaluate the influence of the various geometrical parameters, to optimize the design for high frequency operation. We obtain a performance comparable to conventional PBTs, to which we have incorporated the tunneling characteristics
Subject headings and genre
- NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
- NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
- TEKNIK OCH TEKNOLOGIER Elektroteknik och elektronik hsv//swe
- ENGINEERING AND TECHNOLOGY Electrical Engineering, Electronic Engineering, Information Engineering hsv//eng
- geometrical parameters
- transconductance
- gate wires
- doping level
- permeable base transistors
- resonant tunneling
- high frequency operation
- tunneling characteristics
Added entries (persons, corporate bodies, meetings, titles ...)
- Lind, ErikLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH(Swepub:lu)ftf-eli (author)
- Wernersson, Lars-ErikLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH(Swepub:lu)ftf-lwe (author)
- Fasta tillståndets fysikFysiska institutionen (creator_code:org_t)
Related titles
- In:2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings (IEEE Cat. No.03TH8767), s. 158-1630780386140
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