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Epitaxial growth of...
Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
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- Gogova, Daniela (author)
- Linköping University
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- Ghezellou, Misagh (author)
- Linköping University
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- Tran, Dat Q. (author)
- Linköping University
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- Richter, Steffen (author)
- Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Papamichail, Alexis (author)
- Linköping University
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- Hassan, Jawad Ul (author)
- Linköping University
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- Persson, Axel R. (author)
- Linköping University
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- Persson, Per O. Å. (author)
- Linköping University
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- Kordina, Olof (author)
- Linköping University
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- Monemar, Bo (author)
- Linköping University
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- Hilfiker, Matthew (author)
- University of Nebraska - Lincoln
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- Schubert, Mathias (author)
- University of Nebraska - Lincoln
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- Paskov, Plamen P. (author)
- Linköping University
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- Darakchieva, Vanya (author)
- Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- AIP Publishing, 2022
- 2022
- English.
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In: AIP Advances. - : AIP Publishing. - 2158-3226. ; 12:5, s. 055022-055022
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http://dx.doi.org/10...
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Abstract
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- The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and highperformance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth ofβ-Ga2O3. Epitaxial β-Ga2O3 layers at high growth rates (above 1 μm/h), at low reagent flows, and at reduced growth temperatures(740 ○C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. Thehot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial β-Ga2O3 layers are demonstrated with a 201 ¯rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) ¯ β-Ga2O3 substrates, indicative ofsimilar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be furtherexplored for the fabrication of β-Ga2O3
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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- art (subject category)
- ref (subject category)
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- By the author/editor
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Gogova, Daniela
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Ghezellou, Misag ...
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Tran, Dat Q.
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Richter, Steffen
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Papamichail, Ale ...
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Hassan, Jawad Ul
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show more...
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Persson, Axel R.
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Persson, Per O. ...
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Kordina, Olof
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Monemar, Bo
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Hilfiker, Matthe ...
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Schubert, Mathia ...
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Paskov, Plamen P ...
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Darakchieva, Van ...
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
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AIP Advances
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Lund University