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Resonant states in ...
Resonant states in doped quantum wells
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- Blom, Anders (author)
- Lund University,Lunds universitet,Matematisk fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Mathematical Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Odnoblyudov, M A (author)
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Yassievich, I N (author)
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- Chao, Koung-An (author)
- Lund University,Lunds universitet,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- Wiley, 2003
- 2003
- English.
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In: Physica Status Solidi. B: Basic Research. - : Wiley. - 0370-1972. ; 235:1, s. 85-88
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Abstract
Subject headings
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- Resonant states can have an important influence on the electronic transport, noise and optical properties of heterostructure devices. We have used a non-variational method to study the resonant states formed by shallow donors inside and outside of quantum wells. The method allows us the evaluation of the position and the width (lifetime) of the resonant states and also of matrix elements such as optical transition probabilities. When the width is compared to results from the approach of resolvent operators, a quantitative difference is found, which we attribute to the neglected intraband scattering in the latter method. We also show how the impurity states, localized and resonant, evolve as the donor is moved into the quantum well from an originally infinite distance.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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