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Graphite/p-SiC Scho...
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC
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- Solovan, M. N. (author)
- Yurii Fedkovych Chernivtsi National University
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- Andrushchak, G. O. (author)
- Yurii Fedkovych Chernivtsi National University
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- Mostovyi, A. I. (author)
- Lund University,Lunds universitet,Kemisk fysik,Enheten för fysikalisk och teoretisk kemi,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Chemical Physics,Physical and theoretical chemistry,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH,Yurii Fedkovych Chernivtsi National University
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- Kovaliuk, T. T. (author)
- Yurii Fedkovych Chernivtsi National University
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- Brus, V. V. (author)
- Helmholtz Association of German Research Centers
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- Maryanchuk, P. D. (author)
- Yurii Fedkovych Chernivtsi National University
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(creator_code:org_t)
- 2018
- 2018
- English 6 s.
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In: Semiconductors. - 1063-7826. ; 52:2, s. 236-241
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Abstract
Subject headings
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- Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/p-SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage Voc = 1.84 V and the short-circuit current density Isc = 2.9 mA/cm2 under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Maskinteknik -- Energiteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Mechanical Engineering -- Energy Engineering (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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