In Situ Patterning of Ultrasharp Dopant Profiles in Silicon

Cooil, Simon P. (author): Norwegian University of Science and Technology,Aberystwyth University

Mazzola, Federico (author): Norwegian University of Science and Technology,University of St Andrews

Niu, Yuran R. (author): Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory

Zakharov, Alexei A. (author): Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory

(creator_code:org_t)

2017-02-13
2017
English 6 s.
In: ACS Nano. - : American Chemical Society (ACS). - 1936-0851 .- 1936-086X. ; 11:2, s. 1683-1688

Related links:: http://dx.doi.org/10...; show more...; http://hdl.handle.ne...; https://lup.lub.lu.s...; https://doi.org/10.1...; show less...

Abstract Subject headings

We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ -layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.

By the author/editor: Cooil, Simon P.; Mazzola, Federic ...; Klemm, Hagen W.; Peschel, Gina; Niu, Yuran R.; Zakharov, Alexei ...; show more...; Simmons, Michell ...; Schmidt, Thomas; Evans, D. Andrew; Miwa, Jill A.; Wells, Justin W.; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

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