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Quasifreestanding s...
Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
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Usachov, D. (author)
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Adamchuk, V. K. (author)
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Haberer, D. (author)
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Grueneis, A. (author)
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Sachdev, H. (author)
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- Preobrajenski, Alexei (author)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Laubschat, C. (author)
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Vyalikh, D. V. (author)
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(creator_code:org_t)
- 2010
- 2010
- English.
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 82:7
- Related links:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Subject headings
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- We demonstrate that freeing a single-atom thick layer of hexagonal boron nitride (h-BN) from tight chemical bonding to a Ni(111) thin film grown on a W(110) substrate can be achieved by intercalation of Au atoms into the interface. This process has been systematically investigated using angle-resolved photoemission spectroscopy, x-ray photoemission, and absorption techniques. It has been demonstrated that the transition of the h-BN layer from the "rigid" into the "quasifreestanding" state is accompanied by a change in its lattice constant. Using chemical vapor deposition, graphene has been successfully synthesized on the insulating, quasifreestanding h-BN monolayer. We anticipate that the in situ synthesized weakly interacting graphene/h-BN double layered system could be further developed for technological applications and may provide perspectives for further inquiry into the unusual electronic properties of graphene.
Subject headings
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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