Search: onr:"swepub:oai:lup.lub.lu.se:c3bf612a-365b-49aa-a06d-4d96f07466b8" >
Reduced annealing t...
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
-
- Persson, Anton E.O. (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
- Athle, Robin (author)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,Other operations, LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups
-
- Littow, Pontus (author)
- Lund University
-
show more...
-
- Persson, Karl Magnus (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
- Svensson, Johannes (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
- Borg, Mattias (author)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
- Wernersson, Lars Erik (author)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
show less...
-
(creator_code:org_t)
- AIP Publishing, 2020
- 2020
- English.
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 116:6
- Related links:
-
http://dx.doi.org/10... (free)
-
show more...
-
https://aip.scitatio...
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database