Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

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Persson, Anton E.O.Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH (author)

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

Article/chapterEnglish2020

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AIP Publishing,2020

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LIBRIS-ID:oai:lup.lub.lu.se:c3bf612a-365b-49aa-a06d-4d96f07466b8
https://lup.lub.lu.se/record/c3bf612a-365b-49aa-a06d-4d96f07466b8URI
https://doi.org/10.1063/1.5141403DOI

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Summary in:English

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Deposition, annealing, and integration of ferroelectric Hf x Zr 1 - x O 2 (HZO) thin films on the high-mobility semiconductor InAs using atomic layer deposition are investigated. Electrical characterization reveals that the HZO films on InAs exhibit an enhanced remanent polarization compared to films formed on a reference TiN substrate, exceeding 20 μ C / cm 2 even down to an annealing temperature of 370 °C. For device applications, the thermal processes required to form the ferroelectric HZO phase must not degrade the high-κ/InAs interface. We find by evaluation of the capacitance-voltage characteristics that the electrical properties of the high-κ/InAs are not significantly degraded by the annealing process, and high-resolution transmission electron microscopy verifies a maintained sharp high-κ/InAs interface.

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Athle, RobinLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,Other operations, LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups(Swepub:lu)ro1042at (author)
Littow, PontusLund University (author)
Persson, Karl MagnusLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)eit-krp (author)
Svensson, JohannesLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)eit-jhs (author)
Borg, MattiasLund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ma3352bo (author)
Wernersson, Lars ErikLund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH(Swepub:lu)ftf-lwe (author)
Institutionen för elektro- och informationsteknikInstitutioner vid LTH (creator_code:org_t)

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In:Applied Physics Letters: AIP Publishing116:60003-69511077-3118

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