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Investigations of r...
Investigations of radiative lifetimes in the 3p 5p configuration of neutral silicon
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Bergstrom, H (author)
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Faris, G. W (author)
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Hallstadius, H (author)
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- Lundberg, Hans (author)
- Lund University,Lunds universitet,Atomfysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Atomic Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Persson, A (author)
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(creator_code:org_t)
- 1989
- 1989
- English.
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In: Zeitschrift für Physik D Atoms, Molecules and Clusters. - 0178-7683. ; 13:1, s. 29-31
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http://dx.doi.org/10...
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Abstract
Subject headings
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- Lifetimes for the3S1,3P0, 1, 2 and3D1, 2, 3 states in the 3s23p5p configuration of silicon have been determined using stepwise dye laser excitation and time resolved detection. A comparison is made with theoretical values, calculated using multi-configuration Hartree-Fock wavefunctions. Laser-evaporation was used to produce free silicon atoms by focusing a Nd: YAG laser on a rotating silicon target.
Subject headings
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
Keyword
- Physics and Astronomy
Publication and Content Type
- art (subject category)
- ref (subject category)
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